In the field of nitride semiconductors, a “GaN template” refers to a composite substrate which includes a thin layer of GaN or AlN deposited epitaxially on a foreign substrate such as sapphire, silicon or silicon carbide. The thickness of the nitride layer is usually between 1 and 250 microns. Kyma’s GaN templates are built on sapphire as well as silicon substrates and are available in 2”, 3”, and 100mm diameter. They exhibit industry leading low defect densities and are epi ready with low surface roughness.
Kyma GaN templates grown by HVPE provide a higher purity GaN buffer for subsequent device epitaxy. Typical customer benefits include:
*
Elimination of long (2-5um) MOCVD or MBE undoped buffer growth
*
HVPE based GaN epitaxy has higher purity and transparency than MOCVD based GaN epitaxy
*
In high volume, HVPE based templates will have:
o
Significantly lower growth time/cost vs MOCVD templates due to the much higher growth rates possible with HVPE
o
Lower raw material costs as metalorganic gallium sources are replaced with metal gallium and ammonia usage is 1/10th that of MOCVD
Specification Sheet Characterization Methods
Characterization of gallium nitride wafers as shown in our specification sheets is completed using the following methods:
*
Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
*
Wafer orientation is determined by x-ray diffraction
*
Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
*
Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
*
Macro defects are on the surface of the wafer and are counted by visual inspection.
*
Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.
*
Epitaxial Film thickness for films under 5um thick is determined via Filmetrix or Wyko white light interferometers. Film thickness for films above 5um is typically determined by weight.
Thursday, May 20, 2010
Aluminum Nitride (AlN) Templates
Aluminum Nitride (AlN) Templates
In the field of nitride semiconductors, an “AlN template” refers to a composite substrate which includes a thin layer of AlN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide. Kyma’s AlN templates are built on sapphire and are available from 2" to 150mm in diameter.
Kyma AlN templates are used to provide a low cost alternative to 2-step nitride nucleation processes. Kyma uses these templates for all of our GaN epitaxy, on all substrate types. There are a number of benefits that customers realize from these templates:
*
PVD has excellent scalability which results in lower cost of ownership when ramping production
*
Many LED customers report:
o
Better wavelength uniformity
o
Higher LED brightness
o
Better nucleation repeatability than low temperature MOCVD nucleation
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Advanced PVD reactor purchase is possible from Kyma (R&D tools) or from our equipment partners (production tools) to enable tech transfer of this process to your facility
Specification Sheet Characterization Methods
Characterization of AlN Templates as shown in our specification sheets is completed using the following methods:
*
Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
*
Wafer orientation is determined by x-ray diffraction.
*
Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
*
Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
*
Macro defects are on the surface of the wafer and are counted by visual inspection.
*
Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.
*
Epitaxial Film thickness for films under 5um thick is determined via Filmetrix or Wyko white light interferometers. Film thickness for films above 5um is typically determined by weight.
Kyma Announces Addition of AlN and GaN on Silicon Template Product Lines
Raleigh, NC / May 17, 2010 – Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, today announced the launch of two new nitride template product lines.
Kyma’s AlN-templates-silicon are crack-free and low-bow and consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2”, 3”, and 4” are currently available. The highly-oriented sub-grain structure and smoothness (<1nm RMS) of the crystalline AlN layer provides an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers.
Kyma’s GaN-templates-silicon are crack-free and low-bow and consist of a thin, smooth (<1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2”, 3”, and 4" diameters. The GaN surface is epi-ready for epitaxial growth of additional GaN and GaN-based device layers such as light emitting diodes (LEDs), field effect transistors (FETs), and Schottky diodes.
The combination of low cost silicon substrates and Kyma’s low-cost high-performance deposition processes are excellent starting ingredients to make a cost-effective high-quality template.
Tamara Stephenson, Kyma’s Technical Sales Engineer, stated, “Our customers have been asking us to develop GaN and AlN template products based on Si substrates. It is a great pleasure to begin accepting orders for these highly anticipated products.”
Dr. Ed Preble, Kyma’s COO and VP Business Development added, “The market pull for Kyma’s template products is strong, especially for these GaN and AlN on Si templates. Important goals for us are to continuously improve and augment our growing portfolio of advanced crystalline III-N substrates according to the expanding needs of the market.”
In the future, Kyma will offer larger diameter templates and also will be extending the GaN thickness further, in order to provide lower defect densities and higher thermal conductivity.
About Kyma Technologies:
Kyma is a leading supplier of crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials for a broad range of high performance nitride semiconductor device applications.
The market for nitride semiconductor devices is expected to surpass $30B over the next decade. The combined addressable market for GaN and AlN substrates is expected to surpass $500M in 2010.
Kyma is a registered trademark of Kyma Technologies, Inc.
Contact:
davidlu55@hotmail.com
Kyma’s AlN-templates-silicon are crack-free and low-bow and consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2”, 3”, and 4” are currently available. The highly-oriented sub-grain structure and smoothness (<1nm RMS) of the crystalline AlN layer provides an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers.
Kyma’s GaN-templates-silicon are crack-free and low-bow and consist of a thin, smooth (<1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2”, 3”, and 4" diameters. The GaN surface is epi-ready for epitaxial growth of additional GaN and GaN-based device layers such as light emitting diodes (LEDs), field effect transistors (FETs), and Schottky diodes.
The combination of low cost silicon substrates and Kyma’s low-cost high-performance deposition processes are excellent starting ingredients to make a cost-effective high-quality template.
Tamara Stephenson, Kyma’s Technical Sales Engineer, stated, “Our customers have been asking us to develop GaN and AlN template products based on Si substrates. It is a great pleasure to begin accepting orders for these highly anticipated products.”
Dr. Ed Preble, Kyma’s COO and VP Business Development added, “The market pull for Kyma’s template products is strong, especially for these GaN and AlN on Si templates. Important goals for us are to continuously improve and augment our growing portfolio of advanced crystalline III-N substrates according to the expanding needs of the market.”
In the future, Kyma will offer larger diameter templates and also will be extending the GaN thickness further, in order to provide lower defect densities and higher thermal conductivity.
About Kyma Technologies:
Kyma is a leading supplier of crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials for a broad range of high performance nitride semiconductor device applications.
The market for nitride semiconductor devices is expected to surpass $30B over the next decade. The combined addressable market for GaN and AlN substrates is expected to surpass $500M in 2010.
Kyma is a registered trademark of Kyma Technologies, Inc.
Contact:
davidlu55@hotmail.com
Wednesday, May 19, 2010
Why PMMA/Carbon composite?
Why PMMA/Carbon composite?
Nike basketball shoe to dominate the game that is not unreasonable. Air bag is one of the major weapon. The other mysterious weapon is ARCH.
Nike used PMMA/Carbon composite Arch for basketball shoes for years in very low-key. The other competitors know the benefits of PMMA/Carbon composite Arch has several years lagged behind.
PMMA/Carbon composite Arch has function of energy absorption during jump down and protect foot no twisted. There is no material more suitable than PMMA/Carbon composite used to do ARCH.
For 14 years, PMC is the only supplier of PMMA/Carbon composite Arch. Now, ACI is the second player of PMMA/Carbon composite sheet and Arch.
Further details, please mail acimarket@gmail.com
Nike basketball shoe to dominate the game that is not unreasonable. Air bag is one of the major weapon. The other mysterious weapon is ARCH.
Nike used PMMA/Carbon composite Arch for basketball shoes for years in very low-key. The other competitors know the benefits of PMMA/Carbon composite Arch has several years lagged behind.
PMMA/Carbon composite Arch has function of energy absorption during jump down and protect foot no twisted. There is no material more suitable than PMMA/Carbon composite used to do ARCH.
For 14 years, PMC is the only supplier of PMMA/Carbon composite Arch. Now, ACI is the second player of PMMA/Carbon composite sheet and Arch.
Further details, please mail acimarket@gmail.com
How to make carbon fiber made laptop cost down?
How to make carbon fiber made laptop cost down?
Ferrari to open the first of its kind carbon fiber made laptop. But production costs are too high and yields too low, carbon fiber made laptopnot became unsustainable.
ACI announce carbon fiber made laptop would be cost effective and mass production easily.
ACI claim they have a unique process (patent pending) to produce high quality Elastomeric carbon fiber sheet. With the existing injection mold, the industry can use IMD process to produce laptop shell in cosmetic.
According to ACI, Elastomeric carbon fiber sheet is made of advanced polymer, which make 3K carbon fiber mysterious elegance feeling. ACI is searching a reliable partner to develop high class carbon fiber made laptop in quantity.
For further details, please contact acimarket@gmail.com
Ferrari to open the first of its kind carbon fiber made laptop. But production costs are too high and yields too low, carbon fiber made laptopnot became unsustainable.
ACI announce carbon fiber made laptop would be cost effective and mass production easily.
ACI claim they have a unique process (patent pending) to produce high quality Elastomeric carbon fiber sheet. With the existing injection mold, the industry can use IMD process to produce laptop shell in cosmetic.
According to ACI, Elastomeric carbon fiber sheet is made of advanced polymer, which make 3K carbon fiber mysterious elegance feeling. ACI is searching a reliable partner to develop high class carbon fiber made laptop in quantity.
For further details, please contact acimarket@gmail.com
Friday, May 07, 2010
LED EPI--KYMA PVD ALN
PVD AlNValue Proposition
•NanocolumnarAlNPVD nucleation layers are used to replace existing nucleation layers–Produce higher brightness LEDs
•50-70% lower defect density (002 and 102)–Produce better wavelength uniformity (binning)
•Improves PSS LED uniformity also–Improve MOCVD throughput and repeatability–Lower cost, more scalable (silicon industry tech!)
•1 PVD tool boosts throughput on 6-10 MOCVD’s
MOCVD Time Savings of AlN
•PVD AlNbuffer allows bypass of several steps–Initial ramp to high temp–High temperature sapphire cleaning step–Ramp to nucleation temp–Nucleation layer growth
•1-2 hrs of total time
AlNTemplate Properties
•Repeatable and uniform nucleation surface for GaNepitaxy
–<1nm RMS roughness
–AlNthickness of 10nm –5000nm
–(00.2) FWHM routinely below 20 arcsec
–Epi-ready (no additional processing required)
•GaNepitaxyon PVD AlNis high quality, repeatable, and less complex
–Kyma has used these templates for our bulk GaNgrowth for 10 years
AlN Template Surface
-AFM•RMS Roughness <1nm
•Nanocolumnsof AlNprovide a repeatable and uniform nucleation surface for GaN
•Nano-roughness assists defect density reduction, improves GaNnucleation uniformity, reduces strain
PVD AlNTechnology Summary
•GaNdevice market >99% heteroepitaxybased
–Significant wafer bow during temperature changes
–Performance and reliability problems induced by high defect density
•GaN/InGaNdevices use 3 growth temps (500C, 800C, 1050C)
–Wafer uniformity is dreadful (<20% binning yield?)
–Even worse on patterned sapphire
•GaNnucleation issues
–GaNdirect nucleation has contentious IP landscape
–MOCVD AlN/AlGaNnucleation is expensive
•MOCVD is slow, expensive, low purity, and has poor scalability
–$3M tools only 4,000 2” wafers/month, 6-10 hour long run
•NanocolumnarAlNPVD nucleation layers are superior in all regards
–Produces better wavelength uniformity (binning)
–Produces high brightness LEDs (defect density appears to be lower)
–Lower cost and much more scalable–Improve throughput and repeatability
Secondary AlNBenefits
•AlNPVD useful for all substrates–Sapphire, SiC, Silicon
•MOCVD processes for these all very different
–C-plane, R-plane, M-plane, A-plane
•Fewer MOCVD steps increases fabthroughput
–Simpler N+ etch-back contact since no undopedlayer needed
•Really helpful on patterned sapphire which has larger thickness variations from coalescence issues
•May enable use of wet-etch patterned sapphire
–Lower cost than dry-etch patterned sapphire
•PVD AlNeven better for HVPE GaN
–HVPE is gaining credence as a replacement for MOCVD GaN
–100x higher growth rate, higher purity, better transparency, lower cost, less toxic
–AMAT recent announcement of HVPE/MOCVD cluster tool
•http://www.semiconductor-today.com/news_items/2010/JAN/DOE_180110.htm–Direct nucleation in hot wall HVPE is challenging, PVD AlNbypasses this problem
•Hot wall tools change temp very slowly
•Large temp swings present quartz lifetime issues–Kyma’sHVPE GaNeffort has used PVD AlNfor 10 years
•NanocolumnarAlNPVD nucleation layers are used to replace existing nucleation layers–Produce higher brightness LEDs
•50-70% lower defect density (002 and 102)–Produce better wavelength uniformity (binning)
•Improves PSS LED uniformity also–Improve MOCVD throughput and repeatability–Lower cost, more scalable (silicon industry tech!)
•1 PVD tool boosts throughput on 6-10 MOCVD’s
MOCVD Time Savings of AlN
•PVD AlNbuffer allows bypass of several steps–Initial ramp to high temp–High temperature sapphire cleaning step–Ramp to nucleation temp–Nucleation layer growth
•1-2 hrs of total time
AlNTemplate Properties
•Repeatable and uniform nucleation surface for GaNepitaxy
–<1nm RMS roughness
–AlNthickness of 10nm –5000nm
–(00.2) FWHM routinely below 20 arcsec
–Epi-ready (no additional processing required)
•GaNepitaxyon PVD AlNis high quality, repeatable, and less complex
–Kyma has used these templates for our bulk GaNgrowth for 10 years
AlN Template Surface
-AFM•RMS Roughness <1nm
•Nanocolumnsof AlNprovide a repeatable and uniform nucleation surface for GaN
•Nano-roughness assists defect density reduction, improves GaNnucleation uniformity, reduces strain
PVD AlNTechnology Summary
•GaNdevice market >99% heteroepitaxybased
–Significant wafer bow during temperature changes
–Performance and reliability problems induced by high defect density
•GaN/InGaNdevices use 3 growth temps (500C, 800C, 1050C)
–Wafer uniformity is dreadful (<20% binning yield?)
–Even worse on patterned sapphire
•GaNnucleation issues
–GaNdirect nucleation has contentious IP landscape
–MOCVD AlN/AlGaNnucleation is expensive
•MOCVD is slow, expensive, low purity, and has poor scalability
–$3M tools only 4,000 2” wafers/month, 6-10 hour long run
•NanocolumnarAlNPVD nucleation layers are superior in all regards
–Produces better wavelength uniformity (binning)
–Produces high brightness LEDs (defect density appears to be lower)
–Lower cost and much more scalable–Improve throughput and repeatability
Secondary AlNBenefits
•AlNPVD useful for all substrates–Sapphire, SiC, Silicon
•MOCVD processes for these all very different
–C-plane, R-plane, M-plane, A-plane
•Fewer MOCVD steps increases fabthroughput
–Simpler N+ etch-back contact since no undopedlayer needed
•Really helpful on patterned sapphire which has larger thickness variations from coalescence issues
•May enable use of wet-etch patterned sapphire
–Lower cost than dry-etch patterned sapphire
•PVD AlNeven better for HVPE GaN
–HVPE is gaining credence as a replacement for MOCVD GaN
–100x higher growth rate, higher purity, better transparency, lower cost, less toxic
–AMAT recent announcement of HVPE/MOCVD cluster tool
•http://www.semiconductor-today.com/news_items/2010/JAN/DOE_180110.htm–Direct nucleation in hot wall HVPE is challenging, PVD AlNbypasses this problem
•Hot wall tools change temp very slowly
•Large temp swings present quartz lifetime issues–Kyma’sHVPE GaNeffort has used PVD AlNfor 10 years
Nano coating (奈米保護液)---尋找經銷商
Nano coating (奈米保護液)---尋找經銷商
保證不刮傷
--如果你有刺刺的感覺, 就是見紅!
--奈米保護液,保護刀口!更保護肌膚!
--奈米保護液,保護刀口!更保護肌膚!
永遠光彩奪目
--珠寶和臉蛋一樣,需要保養!
--小小一滴,化妝棉擦勻,簡單容易
拒絕油污水漬
--保護手機電腦銀幕
Wednesday, May 05, 2010
散熱/防水/防塵,一次解決
散熱/防水/防塵,一次解決
LED散熱, iPad散熱都是熱門的話題. 但是,還沒有妥善得到解決.
IP65 防水防塵規格,是手機/筆電以及LED 燈具的基本要求.
kYMA 智慧型解決方案是:散熱/防水/防塵,一次解決!
作法:
用AlN 氮化鋁 真空塗佈主機板用AlN 氮化鋁 真空塗佈覆晶後的LED 基板
特性:
AlN 氮化鋁有很好的散熱特性, 160~180 (W/m‧K)
AlN 氮化鋁有很好的絕緣特性, ＞1014 (ohm‧cm)
AlN 氮化鋁完全透明
AlN 氮化鋁不吸水
KYMA 氮化鋁是奈米塗層!
LED散熱, iPad散熱都是熱門的話題. 但是,還沒有妥善得到解決.
IP65 防水防塵規格,是手機/筆電以及LED 燈具的基本要求.
kYMA 智慧型解決方案是:散熱/防水/防塵,一次解決!
作法:
用AlN 氮化鋁 真空塗佈主機板用AlN 氮化鋁 真空塗佈覆晶後的LED 基板
特性:
AlN 氮化鋁有很好的散熱特性, 160~180 (W/m‧K)
AlN 氮化鋁有很好的絕緣特性, ＞1014 (ohm‧cm)
AlN 氮化鋁完全透明
AlN 氮化鋁不吸水
KYMA 氮化鋁是奈米塗層!
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